High temperature DC characterization of fully-depleted 0.5 /spl mu/m SOS-CMOS MOSFETs for analog circuit design

Extensive characterization results of MOSFET small-signal parameters over temperature (25/spl deg/ to 300/spl deg/C) are presented for low-V/sub T/ transistors fabricated in a SOS 0.5-/spl mu/m process. Low-V/sub T/ devices such as these are particularly useful for low-voltage, low-power (LVLP) analog applications. Small-signal dc parameters critical in analog circuit design are reported including device transconductance efficiency (g/sub m//I/sub d/), output resistance (r/sub ds/), and threshold voltage (V/sub T/). These parameters are summarized as a function of both gate length (0.5 /spl mu/m to 16 /spl mu/m) and temperature. Inversion coefficient representation is employed for data presentation and analysis. This work provides the most thorough presentation of SOS MOSFET dc parameters as a function of both gate length and temperature to date. In addition, this work summarizes device information essential for successful high-temperature SOS-CMOS analog circuit design.