The G/sup 4/-FET: low voltage to high voltage operation and performance

We present the operational and performance of the 4-gate transistor (G/sup 4/-FET) from the low voltage to the high voltage regime. Measured results show the complexity of threshold voltage, subthreshold swing, and breakdown voltage due to the multiple gate control utilized with the G/sup 4/-FET. Devices fabricated in a 0.35 /spl mu/m 3.3 V partially-depleted SOI process can achieve a breakdown voltage of 15 V, excellent subthreshold swing, and high mobility.