Guidelines for predicting single-event upsets in neutron environments (RAM devices)

A simple, graphical technique for estimating SEU rates in most neutron environments is provided. The technique is based on recently improved burst generation rate estimates for silicon. The method considers the point energy deposition from elastic, inelastic, and spallation reactions of neutrons in silicon over a wide range of incident energies (0.1 MeV to 1000 MeV). Alpha-particle energy deposition, which may cause errors in some devices, varies nonlinearly with increasing sensitive volume and is not considered.<
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