Absorption of intense terahertz radiation in InAs/AlSb heterojunction

We have theoretically investigated the free-earner absorption of intense terahertz (THz) radiation in InAs/AlSb heterojunctions (HJ), by considering multiple photon process and interband impact ionization. As many as needed hole subbands and multiphoton channels are self-consistently taken into account. It's indicated that the THz radiation with a larger amplitude or a lower frequency has a stronger effect on electric transport characteristics. Good agreement is obtained between the calculated absorption percentages and the available experimental data for InAs/AlSb HJ's at the radiation frequency f/sub ac/ = 0.64 THz.