Intersubband absorption in GaInNAs/GaAsN quantum wells

Intersubband absorption, high-resolution X-ray diffraction and photoluminescence were investigated in the n-type Ga/sub 0.7/In/sub 0.3/N/sub 0.01/As/sub 0.99//GaAs/sub 0.998/N/sub 0.002/ quantum wells grown by solid-source molecular beam epitaxy (SSMBE). The bound-to-continuum absorption peaks at around 9.5 /spl mu/m were observed in both as-grown and in-situ annealed samples. The effective mass theory was also carried out to calculate the intersubband absorption in the GalnNAs/GaAsN QWs. The experimental absorption curve is in good agreement with our calculation result.