The offset voltage of heterojunction bipolar transistors using two-dimensional numerical simulation with current boundary condition

The offset voltage of an emitter-mesa AlGaAs-GaAs heterojunction bipolar transistor was obtained from the transistor's current-voltage characteristics calculated using a two-dimensional numerical simulation with a current boundary condition at the base contact. The results show that the offset voltage strongly depends on the position of the emitter-base p-n junction and on the width of the emitter mesa.<
>