Effect of illumination on the characteristics of a proposed hetero-MIS diode

A novel heterostructure metal-insulator-semiconductor (MIS) diode is proposed and studied theoretically to examine the effect of illumination on the characteristics of the device. The capacitance of the proposed structure has been calculated in the dark as well as in various illuminated conditions. It is found that the capacitance of the proposed MIS diode can be controlled by varying the incident light intensity. By incorporating the capacitor in the tuned circuit of an oscillator it will be possible to convert the intensity-modulated optical signal. The device is also expected to find useful application in optical CCDs for solid-state imaging and optical tuning.<
>