Simulation of noise characteristics caused by discretized traps in MOSFETs

Simulation methods for the flicker noise caused by discretized traps in gate insulators of scaled-down MOSFETs were studied. An analytical approach for statistical calculation and a partial Monte Carlo method for interpreting the effects of the noise sources were implemented in a device simulator. The analytical method successfully reproduced the fluctuations observed in the measured noise characteristics. The partial Monte Carlo method was used to clarify the roles of the carrier and mobility fluctuations.