InP-based all-epitaxial 1.3-μm VCSELs with selectively etched AlInAs apertures and Sb-based DBRs

We report, for the first time, InP-based all-epitaxially grown 1.3-μm vertical-cavity surface-emitting lasers with lattice-matched Sb-based distributed Bragg reflectors and AlInAs etched apertures. The minimum threshold current and voltage under pulsed operation were 3 mA and 2.0 V, respectively. The thermal impedance was as low as 1.2 K/mW without heat sinking. Implementation of the AlInAs etched aperture was quite effective in improving the injection efficiency and reducing the internal loss, resulting in improved differential efficiency.