The blue-green luminescence and current-voltage characteristics of MOS diode made on thermally annealed Si/sup +/ implanted SiO/sub 2/ substrate

The defect-enhanced blue-green photoluminescence (PL) and electroluminescence (EL) characteristics in metal-oxide-semiconductor (MOS) diode made on 500 nm-thick multi-energy Si-ion-implanted, PECVD-grown SiO/sub 2/ film on (100)-oriented silicon substrate (SiO/sub 2/:Si/sup +/) after thermal annealing at 1100/spl deg/C are demonstrated. The optimized annealing time is 180 min for enhanced PL at 415 nm and 455 nm, which indicates the completely activation of the Si-O related species and the neutral oxygen vacancy (NOV) correlated irradiative defects, respectively. The pulsed-current based EL of the Ag/SiO/sub 2/:Si/sup +//Si/Ag MOS diode is initiated at threshold current of 280 mA, which exhibits a saturation effect at 965 mA after a power increment by nearly four order of magnitude. This corresponds a biased voltage of 6.2 V. The far-field EL emission pattern reveals different colors red-shifting from deep blue to fully green as the biased current increases up to saturation. The current-voltage analysis shows the turn-on voltage and the breakdown field of the MOS diode is 3 V and 130 kV/cm, respectively.