Fabrication of fully released aluminum nitride nanoresonators

Piezoelectric aluminum nitride (AlN) clamped-clamped beam nanoresonators having widths as small as 250 nm have been fabricated. The devices consist of a SiO/sub 2/ structural layer, a platinum bottom electrode, an AlN piezoelectrically active layer, and top platinum driving and sensing electrodes. An additional SiO/sub 2/ layer is used for electrical isolation from the silicon substrate and between the top and bottom electrode traces.