Hot-wire CVD grown microcrystalline silicon films with and without initial growing layer modification by inductive coupled plasma

Summary form only given, as follows. Microcrystalline Si (pc-Si) films have been deposited by using five W wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with and without modification of initial growing layer by using a inductive coupled plasma system.