The simple model for ion-assisted etching using Cl/sub 2//Ar inductively coupled plasma

Summary form only given, as follows. In the case of chemical active gas to be used for the etching of the material forming low-volatile reaction products, the etching result is affected by the chemical and physical factors together. Chemical factor is controlled by the fluxes of chemical active species (atoms, radicals) on the etched surface. Physical factor is represented by the sputter etching as well as by the ion-assisted etching through the ion-stimulated desorption of the reaction products.