Anomalous resistance effect of Si containing deep impurities and its application to micro-sensor

The resistance effect of semiconductors containing shallow impurities obeys T/sup -3/2/ rule. However, for the single crystal n-type silicon containing deep acceptor impurities, the variation of resistance with temperature mainly depends on an exponential term exp[- (E/sub F/ - E/sub A//kT]. This anomalous resistance effect can increase the temperature sensitivity by 1,000 times. Its application to the micro-flow-sensor not only increases the sensitivity, but also reduces its time constant greatly.