An overview of Double-Gate MOSFETs

The Double-Gate (DG) Fully Depleted (FD) SOI MOSFET, and its many implementations, is the leading device candidate for Silicon nano-scale CMOS. Their main characteristics, as compared to the single gate bulk MOSTET, are less S/D capacitance, larger saturated current drive, smaller short channel effects (DIBL), scalability to L=10 nm, near ideal subthreshold slopes (S), and the possibility of electrically adjustable threshold voltages.