Infrared characterization of GaN/Si grown at different temperatures by MOCVD

In this paper, we report on the infrared (IR) characterization of GaN films grown on Si substrate at various growth temperatures by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and electron cyclotron resonance plasma-assisted metal organic chemical vapor deposition (ECR-MOCVD). All the IR measurements were taken in the reflection mode and at room temperature by using Fourier transform infrared (FTIR) spectroscopy in s- and p-polarization. All results show that the structure type of the GaN deposited films is sensitive to the growth temperature and it can be correlated to the variation of the IR reststrahlen band. Our results also show that a good crystalline structure of GaN films can be grown at temperature higher than 600/spl deg/C.