4H-SiC normally-off vertical junction field-effect transistor with high current density

4H-silicon carbide (SiC) normally-off vertical junction field-effect transistor (JFET) is developed in a purely vertical configuration without internal lateral JFET gates. The 2.1-μm vertical p/sup +/n junction gates are created on the side walls of deep trenches by tilted aluminum (Al) implantation. Normally-off operation with blocking voltage V/sub bl/ of 1 726 V is demonstrated with an on-state current density of 300 A/cm
²
at a drain voltage of 3 V. The low specific on-resistance R/sub on-sp/ of 3.6 m/spl Omega/cm
²
gives the V/sub bl/
²
/R/sub on-sp/ value of 830 MW/cm
²
, surpassing the past records of both unipolar and bipolar 4H-SiC power switches.