Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA

Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors fabricated with a 0.5-μm emitter width and varying emitter lengths are studied. The 0.5 μm×2 μm devices yielded excellent low-current RF performance, with an f
_T
=173 GHz and an f
_max
=187 GHz at 1 mA, the highest values reported for InP-based devices to date.