Computer simulation studies of ion implantation in crystalline silicon

Results from systematic computer simulation studies of boron, phosphorus, and arsenic implants into silicon that are important to integrated circuit technology are discussed in terms of interatomic potential, electronic energy loss, and target orientation effects. Detailed crystallographic analyses of axial and planar channeling are presented. The time evolution of an interesting collision cascade which depicts accidental channeling and dechanneling for a 5-keV boron implant is also presented. An examination of the binary collision cascade code MARLOWE is made and applied to simulate hyperchanneling of high-energy alpha particles in silicon.<
>