Advanced design of broadband distributed amplifier using a SiGe BiCMOS technology

In this paper, we present the design of an integrated distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some of the passive devices of the circuit has been achieved from full-wave electromagnetic simulation and novel equivalent circuit. We considered discontinuity effects to reduce parasitics at high frequency. The designed SiGe BiCMOS exhibit an available power gain of 7 dB from 0.5 GHz to 22 GHz. The accurate electromagnetic consideration can be applied to System-On-Chip application in order to reduce parasitics.