A fully integrated, single-chip handset power amplifier in SiGe BiCMOS for W-CDMA applications

A fully integrated, single-chip power amplifier has been designed to meet the requirements of W-CDMA mobile handsets. The circuit was designed in IBM's 47 GHz f/sub T/ SiGe BiCMOS process with all passive components and matching circuits included on-chip. The design achieves 24 dBm output power with 30% PAE and excellent linearity. The power amplifier draws 42 mA of quiescent current from a 3.3 V source. The fabricated circuit occupies a die area of 1.8 mm /spl times/ 1.25 mm, offering at least 10/spl times/ improvement in chip/board area over current designs, allowing for increased levels of transmitter integration.