Highly linear RF CMOS amplifier and mixer adopting MOSFET transconductance linearization by multiple gated transistors

A highly linear CMOS RF amplifier and mixer circuits adopting MOSFET transconductance linearization by linearly superposing several common-source FET transistors in parallel, combined with some additional circuit techniques such as cascode for amplifier and harmonic tuning for mixer, are reported. Experimental result designed using above techniques shows IP3 improvements at given power consumption by as large as 10 dB for RF amplifier at 900 MHz and 7 dB for Gilbert cell mixer at 2.4 GHz without sacrificing other features such as gain and NF.