Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers

Using epitaxial multiple p-n junction structures of 4H-SiC, lateral super junction diodes were fabricated for the first time. The breakdown voltage of the device was 400 V, which is more than 3/spl times/ higher than the theoretical value calculated for a device with uniformly-doped drift layer (130 V), indicating the effective operation of the super junction structure.