Silicon planar technology for single-photon optical detectors

Design and fabrication of single photon avalanche detector (SPAD) in planar technology is reported. Device design and critical issues in the technology are discussed. Experimental test procedures are described for dark-counting rate, afterpulsing probability, photon timing resolution, and quantum detection efficiency. Low-noise detectors are obtained, with dark counting rates down to 10 c/s for devices with 10 /spl mu/m diameter, down to 1 kc/s for 50 /spl mu/m diameter. The technology is suitable for monolithic integration of SPAD detectors and associated circuits.