Drift dominated InP photodetectors with high quantum efficiency

We present a drift dominated InP N-I-P photodetector, which can more efficiently collect the carriers generated by photon absorption by drift created by an electric field throughout the active layer instead of by diffusion associated with normal PN or PIN junction diodes and results in high and flat spectral response from UV to near infrared. It also promises to be an avalanche photodiode with high responsitivity, high gain-bandwidth product, and low noise.