Growth and device performance of InP/GaAsSb HBTs

We report the growth of high-quality InP/GaAsSb heterojunction bipolar transistors (HBTs) for high-frequency applications by metalorganic vapor phase epitaxy (MOVPE) and gas-source molecular beam epitaxy (GSMBE) using carbon as a base dopant. Hole concentrations above 10/sup 20/ cm/sup -3/ are achieved in a carbon-doped GaAsSb base layer. We measure type I and type II luminescence from InP/GaAsSb/InAlAs and GaAsSb/InP superlattices to evaluate quickly the HBT's GaAsSb base layer and collector-base and base-emitter heterojunction quality. The HBTs exhibit excellent DC characteristics and a current gain cutoff frequency over 210 GHz.