Performance and design considerations for high speed SiGe HBTs of f/sub T//f/sub max/=375 GHz/210 GHz

This work presents a Si-based approach to develop high-speed devices for broadband communication applications. SiGe HBTs with f/sub T/ and f/sub max/ of 375 GHz and 210 GHz, respectively, are reported. The achieved f/sub T/ of 375 GHz is the highest reported value for any Si-based transistor and also for any bipolar transistor. Associated BV/sub CEO/ and BV/sub CBO/ are 1.4 V and 5.0 V, respectively. The device structure and process steps are described highlighting the differences from III-V technologies, and the impact of layout configuration and device dimension on the device performance is discussed.