Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers

1.26-/spl mu/m-emitting MOCVD-grown InGaAsN single quantum-well lasers with barriers of E/sub g/=1.62 eV InGaAsP exhibit a room-temperature threshold current density of 440 A/cm/sup 2/ and a characteristic temperature To as high as 128 K and 98 K in the temperature ranges of 10-50/spl deg/C and 50-100/spl deg/C, respectively. A growth pause annealing technique is found to be critical for achieving high photoluminescence intensity. Higher-bandgap barrier materials increase the valence band offset and lead to suppression of carrier leakage, which potentially results in improved temperature characteristics of the InGaAsN quantum-well lasers.