Characterization of light emission from SiGe heterojunction bipolar transistor for photon emission microscopy applications

Light emission from SiGe heterojunction bipolar transistors (HBTs) was characterized for photon emission microscopy applications. Radiative recombination dominates in the non-saturation regime. It increases in the saturation regime due to an increased concentration of minority charge carriers in the base. Hot electron radiation dominates in the avalanche and is suppressed at large collector currents due to base widening.