1/f noise degradation caused by Fowler-Nordheim tunneling stress in MOSFETs

We focus on 1/f noise appearing in MOSFETs. In wafer fabrication, plasma discharges are often used for processes such as etching, photoresist ashing and plasma enhanced CVD. After gate electrode formation, an electrical field higher than the device operation limit might be applied between the gate and substrate because of so-called plasma damage. Such high field stress can result in a significant increase in low frequency noise in MOSFETs. The purpose of this work is to investigate in detail the degradation of 1/f noise levels caused by Fowler-Nordheim tunneling stress.