A 90 nm CMOS technology with modular quadruple gate oxides for advanced SoC applications

This paper describes a 90 nm System-on-a-chip (SoC) technology with modular quadruple gate oxides (16, 28, 50, 64 /spl Aring/) on the same chip allowing integration of optimized transistors operating at supply voltages of 1, 1.2, 1.8, 2.5 and 3.3 Volts for different circuit applications. The proposed modular gate oxide process with pre-gate nitrogen implant was shown to be superior to conventional grow-etch-grow approach in terms of gate leakage current, integrity and interface quality of the multiple gate oxides. A high current drive of 1020/390 /spl mu/A//spl mu/m was demonstrated for N/P channel core transistors.