A 2 GHz 2 mW SiGe BiCMOS frequency divider with new latch-based structure

A low power (2 mW) 2 GHz BiCMOS divider dedicated to UNITS is presented. The divider uses a new latch-based structure to obtain a division-by-4 with only two low-speed D-latches. The modulus can be 64 or 72 by the use of phase switching between the different quadrature outputs. The core of the programmable divider fabricated in 0.25 /spl mu/m STMicroelectronics SiGe BiCMOS technology occupies 0.025 mm/sup 2/ and consumes 1.3 mA at 1.5 V. The residual phase noise at the output is less than -100 dBc/Hz at an offset of 1 kHz from the carrier.