Two-dimensional imaging of cleaved Si p-n junctions with 30-nm resolution using a UHV scanning tunneling microscope

The first two-dimensional scanning tunneling microscope (STM) measurements on cleaved shallow silicon p-n junctions are presented. The current imaging technique provides contrast between p- and n-type regions on biased junctions. The two-dimensional part of the junction is imaged and localized to within 30 nm. Both the cleaving of the junction and the STM measurements are performed in ultrahigh vacuum (UHV).<
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