Thin film poly-Si solar cells with film thickness of 10 microns fabricated by direct deposition using APCVD method

Thin film poly-Si solar cell grown by atmospheric pressure chemical vapor deposition (APCVD) has been fabricated. In order to realize excellent crystallinity poly-Si thin films, two-step deposition method was carried out. The poly-Si film with very high preferential orientation to (220) was obtained with a film thickness of 10 /spl mu/m and grain size of 3 /spl mu/m. Due to high temperature annealing effect, /spl mu/c-Si phase which existed at grain boundaries was disappeared completely. For fabricated thin film poly-Si solar cells, electrical properties were evaluated. Relatively high Jsc of 16.74 mA/cm/sup 2/ was obtained. Factors to promote the properties further were discussed. Results obtained in this work suggest the possibility of realization of high performance thin film poly-Si solar cells.