Efficient single-heterojunction Al/sub 0.27/Ga/sub 0.73/As/GaAs p-i-n photodiodes with 22-GHz bandwidths

A report is presented on the design, fabrication, testing, and modeling of single-heterojunction Al/sub 0.27/Ga/sub 0.73/As/Ga p-i-n photodiodes for use as components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100- mu m/sup 2/ mesa structures. At 5-V reverse bias and 850 nm, 100 fF of capacitance, 90 pA of leakage current, 73% external quantum efficiency, <2% reflectivity, and 22-GHz bandwidths are typically measured.<
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