Electron viscosity effects on electron drift velocity in silicon MOS inversion layers

Electron drift mobility in MOS inversion layers was analyzed by applying the classical kinetic theory of gases for the viscosity in electron gases and the collision with the oxide interface. Drift velocity profiles for electrons, perpendicular to the MOS interface, were calculated by solving the transport equations for electrons with shear stresses due to electron viscosity. Considering the momentum balance at the MOS interface, the reduction in drift velocity by gate voltages is attributed to the change in the electron mean-free-path determined by electron-electron scattering near the MOS interface. Estimated electron scattering radii are consistent with those predicted for charged particles in plasma physics.<
>