High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing

High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been fabricated using metal-induced crystallization followed by laser annealing (L-MIC). Laser annealing after MIC was found to yield a major improvement to the electrical characteristics of poly-Si TFTs. At a laser fluence of 330 mJ/cm
²
, the field effect mobility increased from 71 to 239 cm
²
/Vs, and the minimum leakage current reduced from around 3.0×10/sup -12/ A/μm to 2.9×10/sup -13/ A/μm at a drain voltage of 5 V. In addition, the dependence of the TFT characteristics on the laser energy density was much weaker than that for conventional excimer laser annealed poly-Si TFTs.