SEU reliability improvement due to source-side charge collection in the deep-submicron SRAM cell

The effect of technology scaling (0.5-0.09 /spl mu/m) on single event upset (SEU) phenomena is investigated using full two-dimensional device simulation. The SEU reliability parameters, such as critical charge (Q/sub crit/), feedback time (T/sub fd/) and linear energy transfer (LET), are estimated. For L/sub g/<0.18 /spl mu/m, the source node collects a significant fraction of radiation-induced charge resulting in an increase of LET, despite the lower critical charge at the sensitive drain node. The effect of striking location on LET confirms this finding.