An engineering method to extract equivalent oxide thickness and its extension to channel mobility evaluation

This brief presents a method to extract the equivalent oxide thickness (EOT) from the capacitance-voltage (C-V) as an asymptotic solution in strong accumulation. This method does not need the information of the flat-band voltage (V/sub FB/) or the substrate concentration, and hence, EOT is extracted irrelevant of the substrate dopant profile. This method can be applied to the real FETs in which substrate or channel dopant concentration is not uniform. In addition, the method is presented to evaluate the electron and hole mobility as a function of the channel electric field which is derived by using the EOT value extracted by this new method.