Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer

This paper deals with the evaluation of AlInAs/GaInAs HEMTs (high electron mobility transistors) with an InP etch stop layer (IESL) for power applications in the millimeter and submillimeter wave ranges. We use a 2D Monte Carlo model in order to analyze the capability of the device to handle high voltage with small gate length.