Small-signal analysis and direct S-parameter extraction

We present a comparison of several device parameters obtained by fully two-dimensional physical device simulation of several device parameters and measurements. Several features for direct extraction of either extrinsic or intrinsic (de-embedded) parameter sets from AC-simulation were implemented in the three-dimensional device simulator Minimos-NT. The scattering parameters (S-parameters) and other figures of merit of a complex heterostructure device have been obtained directly by using small-signal simulation. Thus, we use a combination of rigorous III-V group and IV group semiconductor materials modeling and the ability to simulate in the frequency domain. The results were verified both by analytical methods and by comparison with measurement data.