Trapping phenomena in avalanche photodiodes on nanosecond scale

A technique for measuring the release of minority carriers emitted from deep levels in avalanche photodiodes (APDs) at operating conditions is discussed. The method, time-correlated carrier counting (TCCC), is very sensitive and accurate. Densities of filled traps were measured down to 10/sup 9/ cm/sup -3/ and lifetimes in the nanosecond range. This technique can be useful in tailoring gettering processes for APDs and in studies of traps at high electric fields.<
>