N-Si/sub x/C/sub 1-x//P-Si diode fabricated using silane, 1,1,1-trichloroethane and arsine at low temperatures

A novel method for depositing Si/sub x/C/sub 1-x/ alloys on silicon, based on the silane and 1,1,1-trichloroethane gas system, has been investigated in an inexpensive hot-wall horizontal LPCVD reactor. Temperatures in the range of 650 to 800 degrees C and in situ doping using arsine were used successfully. The film characteristics were evaluated using electron spectroscopy for chemical analysis (ESCA) (XPS), Fourier transform infrared spectroscopy (FTIR), and optical absorption. N/sup +/-P/sup +/ heterojunctions with low reverse leakage current and a forward-bias ideality factor of 1.55 were successfully fabricated.<
>