Electroluminescence and materials characterization of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Summary form only given. We demonstrate 1.3 /spl mu/m electroluminescence from a QD ensemble, MOCVD-grown on an n-GaAs substrate. We discuss optimized QD growth using MOCVD as well as characterization of the ensembles. By optimizing key parameters including growth temperature, V/III ratio, deposition rate and system pressure, we achieve surface densities of 8/spl times/10/sup 10//cm/sup 2/, and electroluminescence at 1.3 /spl mu/m with a full width at half maximum of 40 meV.