Metamorphic optical receiver components

GaAs based metamorphic HEMT (MHEMT) technology has emerged as an attractive, low cost alternative to InP HEMTs. The strain-induced imperfections caused by high indium content layers on GaAs are eliminated in metamorphic devices by providing a properly grown lattice-matching buffer between the substrate and active device layers. Metamorphic device technology has now expanded to optical receiver components and shows performance suitable for 40 Gb/s digital and analog optical links.