Comparison of the sensitivity to heavy ions of 0.25 /spl mu/m bulk and SOI technologies

The sensitivity to heavy ions of non-hardened 0.25 /spl mu/m Partially Depleted (PD) SOI and bulk technologies is studied with experiments, device and circuit simulations. Comparable threshold LET are found for both technologies. Nevertheless, SOI saturated cross section is much lower than bulk one. For non-hardened technologies, SOI is then less sensitive than bulk to heavy ions.