A solid state color image sensor using ZnSe-Zn1-xCdxTe heterojunction thin-film photoconductor

A 413H X 506V BBD* image sensor structure using a ZnSe-Znl-,Cd,Te heterojunction thin-film photoconductor for color imaging applications will be described. The device, with its photoconductive-layer-on-solid-scanner (PLOSS), can extend the aperture of the photoconductor to the scanning circuit area to obtain the high blue sensitivity of the heterojunction diode. Low light level sensing of a color image is thus possible. Blooming suppression is also available.