A stabilized, low-noise GaAs FET integrated oscillator with a dielectric resonator at C-band

TO USE Gah FET oscillators as power source in microwave communication systems, good temperature frequency-stability and low noise characteristic are essential’. A GaAs FET integrated oscillator stabilized with a high-Q dielectric resonator has been found to provide a highly-frequency stabilized, low-noise, compact RF power source. To realize optimal coupling between the oscillator and stabilizing resonant circuits, a large-signal design study was undertaken involving the measurement of the dynamic properties of the oscillator and resonant circuit. A stabilized oscillator output of 1OOmW with 17% efficiency and frequency temperature coefficient as low as 2.3 ppm/°C was obtained at 6-HGz. The FM noise characteristic has been improved more than 30dB by introducing the dielectric resonator