Performance of multilayer vapor-phase epitaxial complementary silicon millimeter-wave IMPATT diodes

Recent results obtained on silicon complementary (N
⁺
PP
⁺
) IMPATT oscillators will be presented. Output power of 700 mW at 9.1% efficiency has been achieved at 30 GHz in a tunable disc cavity circuit. Measured FM noise parameter, M, of P-type diodes was found to be 3-dB less than measured value of M for N-type diodes.