Diode-grids for millimeter-wave phase-shifters and frequency doublers

Diode-grids have been fabricated on 2-cm square monolithic gallium-arsenide wafers with 1600 Schottky varactor-diodes. A computer-controlled reflectometer that uses a wave-front division interference technique was developed to measure the reflection coefficient of the diode-grids. A
70\deg
phase shift with a 6-dB loss was obtained at 93 GHz when the bias on the diode-grid was changed from -3V to +1V. A second harmonic conversion efficiency of 16 % and an output power of 0.5 W was obtained at 66 GHz when the diode-grid was pumped with a pulsed magnetron at 33 GHz.